Random Telegraph Noise of a 28-nm Cryogenic MOSFET in the Coulomb Blockade Regime

We observe rich phenomena of two-level random telegraph noise (RTN) from a commercial bulk 28-nm p-MOSFET (PMOS) near threshold at 14 K, where Coulomb blockade (CB) hump arises quantum dot (QD) formed in the channel. Minimum RTN is observed CB high-current level dramatically switches to low-current level. The gate-voltage dependence amplitude and power spectral density match well with transconductance DC transfer curve region. Our work unequivocally captures these QD transport signatures both current noise, revealing confinement effects short-channel PMOS even over 100 times higher than typical dilution refrigerator temperatures experiments (<100 mK). envision that our reported characteristics rooted defect trap would be more prominent for smaller technology nodes, effect should carefully examined cryogenic CMOS circuit designs.